Rainbow-electronics DS1315 Instrukcja Użytkownika Strona 1

Copyright 1995 by Dallas Semiconductor Corporation.All Rights Reserved. For important information regardingpatents and other intellectual property r

DS1315041697 10/22AC ELECTRICAL OPERATING CHARACTERISTICSROM/RAM = VCCO(0°C to 70°C; VCC = 5.0 ± 10%)PARAMETER SYMBOL MIN TYP MAX UNITS NOTESRead Cycl

DS1315041697 11/22DC OPERATING ELECTRICAL CHARACTERISTICS (cont’d) (0°C to 70°C; VCC = 3.3 ±10%)PARAMETER SYMBOL MIN TYP MAX UNITS NOTESOutput Logic 1

DS1315041697 12/22AC ELECTRICAL OPERATING CHARACTERISTICSROM/RAM = GND (0°C to 70°C; VCC = 3.3 ± 10%)PARAMETER SYMBOL MIN TYP MAX UNITS NOTESRead Cycl

DS1315041697 13/22AC ELECTRICAL OPERATING CHARACTERISTICSROM/RAM = VCCO(0°C to 70°C; VCC = 3.3 ± 10%)PARAMETER SYMBOL MIN TYP MAX UNITS NOTESRead Cycl

DS1315041697 14/22TIMING DIAGRAM: READ CYCLE TO TIME CHIP ROM/RAM = GND Figure 6CEIOEQWE = VIHOUTPUT DATA VALID tRC tOD tRR tCO tOE tCOE tODOtOEE tCW

DS1315041697 15/22TIMING DIAGRAM: READ CYCLE TO TIME CHIP ROM/RAM = VCCO Figure 8OUTPUT DATA VALID tRC tCO tRR tOD tRR tRC tAS tAS tOEE tCOE tODO tAH

DS1315041697 16/22TIMING DIAGRAM: RESET PULSE Figure 10 tRSTRST5V DEVICE POWER–UP POWER–DOWN CHARACTERISTICS,ROM/RAM = VCCO OR GND (0°C to 70°C)PARAM

DS1315041697 17/225V DEVICE POWER–DOWN CONDITION Figure 12 tCEtPFVBAT - 0.2V4.5VtFCEICEOCEOVCCIROM/RAM = GNDROM/RAM = VCCO4.25V4.0VVBAT1,2tFBtPD tCE3.

DS1315041697 18/223.3V DEVICE POWER–UP CONDITION Figure 132.7VtRVILBAT - 0.2VCEICEOCEOVCCIROM/RAM = GNDROM/RAM = VCCOtCEtCEtREC2.6V2.5V tPD3.3V DEVICE

DS1315041697 19/22NOTES:1. All voltages are referenced to ground.2. Measured with load shown in Figure 15.3. Input pulse rise and fall times equal 10

DS1315041697 2/22PIN DESCRIPTIONX1, X2 – 32.768 KHz Crystal ConnectionWE – Write EnableBAT1 – Battery 1 InputGND – GroundD – Data InputQ – Data Output

DS1315041697 20/22DS1315 TIME CHIP 16–PIN DIP1CAB DHJKGEFDIM MIN MAX16–PINPKGA IN. 0.740 0.780MMB IN. 0.240 0.260MMC IN. 0.120 0.140MMD IN. 0.300

DS1315041697 21/22DS1315 TIME CHIP 16–PIN SOICAFCEphiJGKLHB1PKG 16–PINDIM MIN MAXA IN.MM0.40210.210.41210.46B IN.MM0.2907.370.3007.65C IN.MM0.0892.260

DS1315041697 22/22DS1315 TIME CHIP 20–PIN TSSOPDHESEE DETAIL ADETAIL AA1ABLGe1cphinA2DIM MIN MAXA MM – 1.10A1 MM 0.05 –A2 MM 0.75 1.05C MM 0.09 0.18L

DS1315041697 3/22Communication with the Time Chip is established bypattern recognition of a serial bit stream of 64 bits whichmust be matched by execu

DS1315041697 4/22TIME CHIP COMPARISON REGISTER DEFINITION Figure 2765432101100010100111010101000110101110011000101001110101010001101011100C53AA35CC53A

DS1315041697 5/22When the ROM/RAM pin is connected to VCCO, the con-troller is set in the ROM mode. Since ROM is a read–only device that retains data

DS1315041697 6/22ROM/TIME CHIP INTERFACE Figure 4ROMA1, A3 – ANDATA I/OA2OEA0DS1315DOEWECEIRSTBAT1X1BAT2X2CEOQVCCIVCCOROM/RAM++BAT1BAT232.768 KHzA0 –

DS1315041697 7/22TIME CHIP REGISTER DEFINITION Figure 57654 32100.1 SEC00–9900–5900–5901–1201–0701–3101–1200–9901234567RANGE(BCD)REGISTER0012/24 010HR

DS1315041697 8/22ABSOLUTE MAXIMUM RATINGS*Voltage on any Pin Relative to Ground –0.3V to +7.0V Operating Temperature, commercial range 0°C to 70°COper

DS1315041697 9/22DC POWER DOWN ELECTRICAL CHARACTERISTICS (0°C to 70°C; VCC < 4.5V)PARAMETER SYMBOL MIN TYP MAX UNITS NOTESCEO Output Voltage VCEO