Rainbow-electronics DS4520 Instrukcja Użytkownika Pobierz pdf (Strona 3)

DS4520

9-Bit I

C Nonvolatile

I/O Expander Plus Memory

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Note 1: All voltages referenced to ground.

Note 2: I

STBY

is specified with SDA = SCL = V

, outputs floating, and inputs connected to V

or GND.

Note 3: The DS4520 does not obstruct the SDA and SCL lines if V

is switched off as long as the voltages applied to these inputs

do not violate their minimum and maximum input voltage levels.

Note 4: Guaranteed by design.

Note 5: Timing shown is for fast-mode (400kHz) operation. This device is also backward compatible with I

C standard-mode timing.

Note 6: C

—total capacitance of one bus line in picofarads.

Note 7: EEPROM write time applies to all the EEPROM memory and SRAM shadowed EEPROM memory when SEE = 0. The EEPROM

write time begins after a stop condition occurs.

AC ELECTRICAL CHARACTERISTICS (See Figure 2)

= +2.7V to +5.5V; T

= -40°C to +85°C, unless otherwise noted. Timing referenced to V

IL(MAX)

and V

IH(MIN)

PARAMETER

SYMBOL

CONDITIONS MIN TYP MAX UNITS

SCL Clock Frequency f

SCL

(Note 5) 0 400 kHz

Bus Free Time Between Stop and

Start Conditions

BUF

1.3 µs

Hold Time (Repeated) Start

Condition

HD:STA

0.6 µs

Low Period of SCL t

LOW

1.3 µs

High Period of SCL t

HIGH

0.6 µs

Data Hold Time

HD:DAT

0 0.9 µs

Data Setup Time

SU:DAT

100 ns

Start Setup time

SU:STA

0.6 µs

SDA and SCL Rise Time t

(Note 6) 20 + 0.1C

300 ns

SDA and SCL Fall Time t

(Note 6) 20 + 0.1C

300 ns

Stop Setup Time

SU:STO

0.6 µs

SDA and SCL Capacitive Loading

(Note 6) 400 pF

EEPROM Write Time t

(Note 7) 10 20 ms

NONVOLATILE MEMORY CHARACTERISTICS

= +2.7V to +5.5V, unless otherwise noted.)

PARAMETER

SYMBOL

CONDITIONS MIN TYP MAX UNITS

EEPROM Writes +70°C (Note 4)

50,000

1 2 3 4 5 6 7 8 9 10

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