
DS1626/DS1726
4 of 13
EEPROM AC ELECTRICAL CHARACTERISTICS
(V
DD
= 2.7V to 5.5V; T
A
= -55°C to +125°C.)
PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS
EEPROM Write Cycle Time t
wr
410ms
EEPROM Writes N
EEWR
-55°C to +55°C 50k Writes
EEPROM Data Retention t
EEDR
-55°C to +55°C 10 Years
AC ELECTRICAL CHARACTERISTICS
(V
DD
= 2.7V to 5.5V; T
A
= -55°C to +125°C.)
PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS
9-bit 93.75
10-bit 187.5
11-bit 375
Temperature Conversion Time t
TC
12-bit 750
ms
Data In to Clock Setup t
DC
(Note 5) 35 ns
Clock to Data In Hold t
CDH
(Note 5) 40 ns
Clock to Data Out Delay t
CDD
(Notes 5, 6) 150 ns
Clock Low/High Time t
CL
, t
CH
(Note 5) 285 ns
Clock Frequency f
CLK
(Note 5) 0 1.75 MHz
Clock Rise/Fall Time t
R
, t
F
(Note 5) 500 ns
RST to Clock Setup t
RC
(Note 5) 100 ns
Clock to RST Hold
t
CRH
(Note 5) 40 ns
RST Inactive Time t
RI
(Note 7) 125 ns
Clock High to I/O Hi-Z t
CDZ
(Note 5) 50 ns
RST Low to I/O Hi-Z t
RDZ
(Note 5) 50 ns
CNV Pulse Width t
CNV
(Note 8) 250ns 500ms
I/O Capacitance C
I/O
10 pF
Input Capacitance C
I
5pF
NOTES:
1) All voltages are referenced to ground.
2) See Figure 2 for TYPICAL OPERATING CURVES.
3) I
STBY
, I
DD
specified with DQ, CLK/CNV = V
DD
and RST = GND.
4) Drift data is based on a 1000hr stress test at +125°C with V
DD
= 5.5V.
5) See Timing Diagrams in Figure 3. All timing is referenced to 0.7 x V
DD
and 0.3 x V
DD
.
6) Load capacitance = 50pF.
7) t
RI
must be 10ms minimum following any write command that involves the E
2
memory.
8) 250ns is the guaranteed minimum pulse width for a conversion to start, however, a smaller pulse
width may start a conversion.
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