Rainbow-electronics BR24L01AFVM-W Instrukcja Użytkownika Pobierz pdf

BR24L01A-W / BR24L01AF-W / BR24L01AFJ-W /

Memory ICs

BR24L01AFV-W / BR24L01AFVM-W

1/25

128

8 bit electrically erasable PROM

BR24L01A-W / BR24L01AF-W / BR24L01AFJ-W

BR24L01AFV-W / BR24L01AFVM-W

The BR24L01A-W series is 2-wire (I

C BUS type) serial EEPROMs which are electrically programmable.

∗

C BUS is a registered trademark of Philips.

Applications

General purpose

Features

1) 128 registers

8 bits serial architecture.

2) Single power supply (1.8V to 5.5V).

3) Two wire serial interface.

4) Self-timed write cycle with automatic erase.

5) 8 byte page write mode.

6) Low power consumption.

Write

(5V) : 1.2mA (Typ.)

Read (5V) : 0.2mA (Typ.)

Standby (5V) : 0.1

A (Typ.)

7) DATA security

Write protect feature (WP pin) .

Inhibit to WRITE at low V

8) Small package - - - DIP8 / SOP8 / SOP-J8 / SSOP-B8 / MSOP-8

9) High reliability EEPROM with Double-Cell Structure

10) High reliability fine pattern CMOS technology.

11) Endurance : 1,000,000 erase / write cycles

12) Data retention : 40 years

13) Filtered inputs in SCL

•

SDA for noise suppression.

14) Initial data FFh in all address.

Absolute maximum ratings

(Ta=25

Parameter Symbol Limits Unit

Supply voltage −0.3 to +6.5 V

Power dissipation mW

Storage temperature

−65 to +125

°C

Operating temperature

°C

Terminal voltage

−

−40 to +85

−0.3 to V

+0.3

Tstg

Topr

∗1

450 (SOP8)

800 (DIP8)

∗2

∗3

300 (SSOP-B8)

450 (SOP-J8)

∗4

310 (MSOP8)

∗5

∗1 Degradation is done at 8.0mW/°C for operation above 25°C.

∗2, 3 Degradation is done at 4.5mW/°C for operation above 25°C.

∗4 Degradation is done at 3.0mW/°C for operation above 25°C.

∗5 Degradation is done at 3.1mW/°C for operation above 25°C.

1 2 3 4 5 6 ... 24 25

Podsumowanie treści

Strona 1 - BR24L01AFV-W / BR24L01AFVM-W

BR24L01A-W / BR24L01AF-W / BR24L01AFJ-W /Memory ICs BR24L01AFV-W / BR24L01AFVM-W1/25128×8 bit electrically er

Strona 2

BR24L01A-W / BR24L01AF-W / BR24L01AFJ-W /Memory ICs BR24L01AFV-W / BR24L01AFVM-W10/25zByte writeSDALINEWPSTAR

Strona 3

BR24L01A-W / BR24L01AF-W / BR24L01AFJ-W /Memory ICs BR24L01AFV-W / BR24L01AFVM-W11/25zCurrent readSDALINESTAR

Strona 4

BR24L01A-W / BR24L01AF-W / BR24L01AFJ-W /Memory ICs BR24L01AFV-W / BR24L01AFVM-W12/25zSequential readSTARTSLA

Strona 5

BR24L01A-W / BR24L01AF-W / BR24L01AFJ-W /Memory ICs BR24L01AFV-W / BR24L01AFVM-W13/25zApplication1) WP effect

Strona 6

BR24L01A-W / BR24L01AF-W / BR24L01AFJ-W /Memory ICs BR24L01AFV-W / BR24L01AFVM-W14/252) Software reset Ple

Strona 7 - HIGH : WP

BR24L01A-W / BR24L01AF-W / BR24L01AFJ-W /Memory ICs BR24L01AFV-W / BR24L01AFVM-W15/253) Acknowledge polling

Strona 8 - A2 A1 A01010 R / W

BR24L01A-W / BR24L01AF-W / BR24L01AFJ-W /Memory ICs BR24L01AFV-W / BR24L01AFVM-W16/254) Command cancellation

Strona 9

BR24L01A-W / BR24L01AF-W / BR24L01AFJ-W /Memory ICs BR24L01AFV-W / BR24L01AFVM-W17/255) Notes for power suppl

Strona 10

BR24L01A-W / BR24L01AF-W / BR24L01AFJ-W /Memory ICs BR24L01AFV-W / BR24L01AFVM-W18/25 • LVCC circuit LVCC c

Strona 11

BR24L01A-W / BR24L01AF-W / BR24L01AFJ-W /Memory ICs BR24L01AFV-W / BR24L01AFVM-W19/25 • The minimum value RPU

Strona 12

BR24L01A-W / BR24L01AF-W / BR24L01AFJ-W /Memory ICs BR24L01AFV-W / BR24L01AFVM-W2/25zRecommended operating co

Strona 13

BR24L01A-W / BR24L01AF-W / BR24L01AFJ-W /Memory ICs BR24L01AFV-W / BR24L01AFVM-W20/258) Notes for noise on VC

Strona 14

BR24L01A-W / BR24L01AF-W / BR24L01AFJ-W /Memory ICs BR24L01AFV-W / BR24L01AFVM-W21/25 • The maximum value of

Strona 15

BR24L01A-W / BR24L01AF-W / BR24L01AFJ-W /Memory ICs BR24L01AFV-W / BR24L01AFVM-W22/2510) The special characte

Strona 16

BR24L01A-W / BR24L01AF-W / BR24L01AFJ-W /Memory ICs BR24L01AFV-W / BR24L01AFVM-W23/2520.60.50.40.30.20.1001 3

Strona 17

BR24L01A-W / BR24L01AF-W / BR24L01AFJ-W /Memory ICs BR24L01AFV-W / BR24L01AFVM-W24/2523001002000−100−20001 34

Strona 18

BR24L01A-W / BR24L01AF-W / BR24L01AFJ-W /Memory ICs BR24L01AFV-W / BR24L01AFVM-W25/2520.60.30.40.50.20.1001 3

Strona 19

BR24L01A-W / BR24L01AF-W / BR24L01AFJ-W /Memory ICs BR24L01AFV-W / BR24L01AFVM-W3/25zDimensionFig.1(a) PHYSIC

Strona 20

BR24L01A-W / BR24L01AF-W / BR24L01AFJ-W /Memory ICs BR24L01AFV-W / BR24L01AFVM-W4/25zBlock diagram1A0A1 2A2 3

Strona 21

BR24L01A-W / BR24L01AF-W / BR24L01AFJ-W /Memory ICs BR24L01AFV-W / BR24L01AFVM-W5/25zAC operating characteris

Strona 22

BR24L01A-W / BR24L01AF-W / BR24L01AFJ-W /Memory ICs BR24L01AFV-W / BR24L01AFVM-W6/25zSynchronous data timingt

Strona 23

BR24L01A-W / BR24L01AF-W / BR24L01AFJ-W /Memory ICs BR24L01AFV-W / BR24L01AFVM-W7/25zWP timingSCLSDAWPtHD : W

Strona 24

BR24L01A-W / BR24L01AF-W / BR24L01AFJ-W /Memory ICs BR24L01AFV-W / BR24L01AFVM-W8/25zDevice operation1) Start

Strona 25

BR24L01A-W / BR24L01AF-W / BR24L01AFJ-W /Memory ICs BR24L01AFV-W / BR24L01AFVM-W9/256) Acknowledge • Acknowle

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